vishay rg4a to RG4J document number 86076 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 1 17133 fast sinterglass diode \ features ? high temperature metallurgically bonded con- struction cavity-free glass passivated junction fast switching for high efficiency 3.0 ampere operation at t amb = 50 c with no ther- mal runaway hermetically sealed package mechanical data case: sintered glass case, g4 terminals: solder plated axial leads, solderable per mil-std-750, method 2026 mounting position: any weight: 1040 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package rg4a v rrm = 50 v g4 rg4b v rrm = 100 v g4 rg4d v rrm = 200 v g4 rg4g v rrm = 400 v g4 RG4J v rrm = 600 v g4 parameter te s t c o n d i t i o n part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics rg4a v r = v rrm 50 v see electrical characteristics rg4b v r = v rrm 100 v see electrical characteristics rg4d v r = v rrm 200 v see electrical characteristics RG4J v r = v rrm 400 v see electrical characteristics rg1j v r = v rrm 600 v maximum average forward rectified current 0.375 " (9.5 mm) lead length at t amb = 55 c i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) i fsm 100 a maximum average reverse current at rated peak reverse voltage t amb = 25 c i r(av) 2.0 a at rated peak reverse voltage t amb = 100 c i r(av) 100 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com 2 document number 86076 rev. 2, 28-jan-03 vishay rg4a to RG4J vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified 1) thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, with both leads attached to heat sink electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) parameter symbol value unit typical thermal resistance 1) r ja 22 k/w parameter test condition part symbol ty p. max unit maximum instantaneous forward voltage i f = 3.0 a v f 1.3 v maximum reverse current v r = v rrm i r 5.0 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg4a t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg4b t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg4d t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg4g t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a RG4J t rr 250 ns typical junction capacitance v r = 4.0 v, f = 1 mhz c j 50 pf figure 1. forward current derating curve ambient tem p erature ( c ) average forward rectified current (a) 0 25 50 75 100 125 150 175 0 1. 0 2.0 3.0 4.0 0.375" (9.5mm) lead lengt h resistiv e or inductive load grg4a_01 figure 2. maximum non-repetitive peak forward surge current number of cycles at 60 h z peak forward surge current (a) 100 200 10 1 10 100 t a =55 c 8.3ms single half sine-wave (jedec method) grg4a_02
vishay rg4a to RG4J document number 86076 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics figure 5. typical j unction capacitance instantaneous forward voltage (v) instantaneous forward current (a) 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 0.0 1 0.1 1 10 20 t j =25 c pulse width = 300 s 1% duty cycle grg4a_03 percent of rated peak reverse voltage (v) instantaneous reverse current ( a) 0 2 0 4 0 6 0 8 0 1 00 0.01 0.1 1 10 t j =125 c t j =75 c t j =25 c grg4a_04 reverse voltage (v) junction capacitance (pf) 1 10 100 10 50 100 t j =25 c f = 1.0 mh z vsig, 50mvp-p grg4a_05
www.vishay.com 4 document number 86076 rev. 2, 28-jan-03 vishay rg4a to RG4J vishay semiconductors package dimensions in inches (mm) 0.180 (4.6) 0.115 (2.9) 0.042 (1.07) 0.038 (0.962) dia. dia. max. 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. 17032
vishay rg4a to RG4J document number 86076 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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